BGT24LTR22
BGT24LTR22
Low Power Multichannel 24GHz Radar MMIC for Smart Sensing
Applications
Features
24 GHz transceiver MMIC (2 TX, 2 RX)
Fully integrated low phase noise VCO
Medium power amplifier with variable output power
Integrated power detectors
Homodyne low noise quadrature receivers
Configurable analog baseband amplification stages
Frequency divider
Low power consumption
Multimode operation (Master/Slave)
Fully ESD protected device
Single ended RF terminals
Single supply voltage 1.5V
WFWLB-52-3 pin plastic package sized 3.63mmx3.63mm
Pb-free (RoHS compliant) package
Potential Applications
Smart home appliances
Drone collision avoidance
Traffic monitoring
Security applications
Description
BGT24LTR22 is a low power, low noise multi-channel Silicon Germanium transceiver MMIC for 24 GHz radar
applications. It provides building blocks for analog signal generation and reception, operating in the frequency
range from 24.0 GHz up to 24.25 GHz. Integrated digital blocks controlling the chip are implemented in order to
support radar system design.
The device is manufactured in Infineon’s B11HFC BiCMOS technology offering a cutoff frequency higher than
300GHz. It is housed in Infineons plastic embedded Wafer Level Ball Grid Array (eWLB) package which can be
processed in standard SMT flow.
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
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BGT24LTR22
Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
Table of Content
Table of Content
Features ........................................................................................................................................ 1
Potential Applications ..................................................................................................................... 1
Description .................................................................................................................................... 1
Table of Content ............................................................................................................................. 2
1
1.1
1.2
1.3
1.4
1.5
1.6
Electrical Characteristics ........................................................................................................ 3
Absolute Maximum Ratings .................................................................................................................... 3
ESD Integrity ............................................................................................................................................ 4
Power Supply........................................................................................................................................... 4
TX Section ................................................................................................................................................ 4
RX Section ................................................................................................................................................ 5
Frequency Divider ................................................................................................................................... 6
2
2.1
SPI Interface .......................................................................................................................... 7
SPI Timing Requirements........................................................................................................................ 7
3
3.1
3.2
3.3
Block Diagram and Pin Description........................................................................................... 8
Block Diagram ......................................................................................................................................... 8
Pin Out ..................................................................................................................................................... 9
Pin Definition and Function .................................................................................................................... 9
4
Package Dimensions and Footprint ......................................................................................... 11
Datasheet
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BGT24LTR22
Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
Electrical Characteristics
1
Electrical Characteristics
Attention:
Test ■ means that the parameter is not subject to production test. It was verified by design
or characterization respectively.
1.1
Absolute Maximum Ratings
Table 1
Absolute Maximum Ratings: TA = -40 °C .. 85°C; all voltages with respect to ground, positive
current flowing into pin (unless otherwise specified)
Parameter
Symbol
Value
Min.
Supply voltage
VDD
DC voltage at RF pins
Typ.
Unit
Max.
Note/
Test Condition
-0.3
-
VDD,max
+0.3
V
VDC,RF
0
-
0
V
DC voltage at VCO tuning
pin VTUNE
VTUNE
0
-
5
V
Voltage applied to all
other user I/O pins
VDC,I/O
-0.3
-
VDD
+0.3
V
RF input power RX inputs
PRF
-
-
0
dBm
Total power dissipation
PDISS
-
-
500
mW
Storage temperature
range
TSTG
-40
-
150
°C
Operational temperature
range
TC
-40
-
+85
°C
Temperature at package
soldering point
Thermal resistance of
package
Rth,P
-
18
-
K/W
Represents bulk silicon to
package solder balls
DC-short at RF pins (RX1,
RX2, TX1, TX2) to GND
Pins RX1, RX2
Attention: Stresses exceeding the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
Datasheet
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BGT24LTR22
Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
Electrical Characteristics
1.2
ESD Integrity
Table 2
ESD integrity
Parameter
Symbol
ESD robustness HBM1
2
ESD robustness CDM
Value
Unit
Note/
Test Condition
Min.
Typ.
Max.
VESD-HBM
-1
-
1
kV
All pins
VESD-CDM
-500
-
500
V
All pins
1) According to ANSI/ESDA/JEDEC JS-001 (R = 1.5kOhm, C = 100pF) for Electrostatic Discharge Sensitivity Testing, Human Body Model (HBM)-Component
Level
2) According to ESDA/JEDEC JS-002 Field-Induced Charged Device Model (CDM), Test Method for Electrostatic-Discharge-Withstand Thresholds of
Microelectronic Components
Please note that this result is subject to:
- lot variations within the manufacturing process as specified by Infineon
- changes in the specific test setup
1.3
Power Supply
Table 3
Power Supply Electrical Characteristics: TA = -40 °C .. 85 °C
Parameter
Symbol
Value
Min.
Unit
Typ.
Max.
1.45
1.5
1.6
V
Note/
Test Condition
Supply voltage
VDD
Supply current nominal
operation mode
IDD_ON
-
170
230
mA
SPI Settings – Refer to AN607
Supply current in reduced
power consumption mode
IDD_RED
-
135
-
mA
SPI Settings – Refer to AN607
Supply current standbymode
IDD_STDBY
-
-
1
mA
SPI Settings – Refer to AN607
1.4
TX Section
Table 4
TX Section Electrical Characteristics: TA = -40 °C .. 85 °C, VDD = 1.45 V .. 1.6 V; all parameters are
for master mode operation (unless otherwise specified)
Parameter
Symbol
Value
Min.
Typ.
Unit
Max.
Note/
Test Condition
VCO frequency range
fVCO
24.0
-
24.25
GHz
VCO phase noise
PN
-
-65
-85
-50
-70
dBc/Hz
@10kHz offset
@100kHz offset
VCO AM noise
PAM
-
-148
-
dBc/Hz
@100kHz offset
Tuning voltage to cover
VCO frequency range
VTUNE
0
0.7
3
V
Datasheet
4 of 15
ISM band covered from 0 V to
1.5 V
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BGT24LTR22
Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
Electrical Characteristics
Table 4
TX Section Electrical Characteristics: TA = -40 °C .. 85 °C, VDD = 1.45 V .. 1.6 V; all parameters are
for master mode operation (unless otherwise specified)
Parameter
Symbol
Value
Min.
Typ.
VCO tuning sensitivity
within VCO frequency
range
f /VTUNE 500
VCO temperature drift
within VCO frequency
range
f /T
2nd Harmonic suppression
∆Pfund,H2
VCO nonharmonic
suppression
Unit
Max.
1600
3000
MHz/V
-
-5
-
MHz/K
15
27
-
dBc
PSPUR
-
-55
-40
dBm
TX output power1
PTX1
1
5
9.5
dBm
TX output power dynamic
range
∆POUT
17
24
-
dB
TX load impedance
ZTX1
-
50
-
Note/
Test Condition
Single-ended at outer edge of
compensation structure on
PCB as indicated in AN607
1.5
RX Section
Table 5
RX Section Electrical Characteristics: TA = -40 °C .. 85 °C, VDD = 1.45 V .. 1.6 V; all parameters are
within master mode operation (unless otherwise specified)
Parameter
Symbol
Value
Min.
RX frequency range
fRX
Single-sideband noise
figure1
NFSSB
Typ.
Unit
Max.
24.0
-
24.25
GHz
-
8
16.5
dB
-
8.5
15.5
Note/
Test Condition
@ fIF = 200 kHz – Bypass Mode
SPI configurable – Refer to
AN607
@ fIF = 200 kHz – ABB Mode
SPI configurable – Refer to
AN607
RF downconverter
conversion gain1
GDC
16
25
33
dB
@ fIF = 200 kHz – Bypass Mode
SPI configurable – Refer to
AN607
Analog baseband Gain
GABB
-
0/30/35/40/
45/50/55/60
-
dB
Configurable via SPI
Input 1 dB compression
point
IP1dB
-
-19
-
dBm
RX in Bypass Mode
LO input power
PLOIN
-
-10
-
dBm
For slave mode operation
Refer to AN607 for more details about parameter variation over temperature
Datasheet
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BGT24LTR22
Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
Electrical Characteristics
Table 5
RX Section Electrical Characteristics: TA = -40 °C .. 85 °C, VDD = 1.45 V .. 1.6 V; all parameters are
within master mode operation (unless otherwise specified)
Parameter
Symbol
Value
Min.
Typ.
Unit
Note/
Test Condition
Max.
Baseband high pass filters Fc-hpf
cut off frequency
-
20/50/80/100
-
kHz
Configurable via SPI
1st order, -3 dB definition
Baseband low pass filters
cut off frequency
Fc-lpf
-
600
-
kHz
4th order, -3 dB definition
Quadrature phase
imbalance
P
-10
-
10
deg
Quadrature amplitude
imbalance
A
-1.5
-
1.5
dB
IF output impedance
ZIF
-
400
-
Differential
IF output impedance –
Bypass Mode
ZIFBY
-
1
-
k
Differential
IF output common mode
voltage
VIFCMD
-
0.75
-
V
IF output power supply
rejection ratio
PSRR
-
60
-
dB
@ DC
RX input impedance
ZRXIN
-
50
-
Single-ended at outer edge of
compensation structure on
PCB as indicated in AN607
1.6
Frequency Divider
Table 6
Frequency Divider Electrical Characteristics: TA = -40 °C .. 85 °C, VDD = 1.45 V .. 1.6 V,
Freq = 24GHz
Parameter
Symbol
Value
Min.
Typ.
Unit
Max.
Note/
Test Condition
Dividing factor 1
DDIV1
-
2^20
-
-
selectable via SPI
Dividing factor 2
DDIV2
-
2^16
-
-
selectable via SPI
Dividing factor 3
DDIV3
-
2^14
-
-
selectable via SPI
Dividing factor 4
DDIV4
-
2^13
-
-
selectable via SPI
Dividing factor 5
DDIV5
-
16
-
-
selectable via SPI
Divider output power
PDIV5
-13
-5
0
dBm
Divider output voltage
range
VDIV
0
-
VDD
V
For dividing factors 1 to 4
External capacitive load
CextLoad
-
-
15
pF
For dividing factors 1 to 4
Datasheet
6 of 15
For dividing factor 5 @50 Ohms load
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BGT24LTR22
Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
SPI Interface
2
SPI Interface
2.1
SPI Timing Requirements
The BGT24LTR22 is configured using a 4-wire SPI interface. It is used to configure the internal modules of the
BGT24LTR22 chip via registers. The main tasks are to set the mode of operation of the TX and/or RX chain and
the baseband section. Communication with an external micro controller is done via the four dedicated pins
SPIDI, SPIDO, SPICS and SPICLK. Figure 1 demonstrates how the timing of the SPI behaves. The “working edge”
is the rising edge of the clock SPICLK. The master application processor presents data for BGT24LTR22 at the
falling edge on SPIDI, BGT24LTR22 samples data at the rising edge. Read data is presented for the master on
the rising edge on SPIDO. Refer to the application note AN607 for all details related to the SPI registers to control
the MMIC.
Note: Asynchronous reset (SPIRST) must be de-asserted at least 10 ns before the falling edge of SPICLK.
tL
tch
T
tT
tcl
SPICS
SPICLK
SPIDI
SPIDO
tds
Figure 1
Table 7
tmis
tmih
tmos
tdh
tmoh
SPI timing diagram
SPI Interface timing requirements
Parameter
Symbol
Values
Min. Typ. Max.
20
Unit
SPI clock period
T
Clock high time
tch
9
ns
Clock low time
tcl
9
ns
Setup time SPIDI
Hold time SPIDI
Setup time SPIDO
tmos
tmoh
tmis
tmih
5
5
5
ns
ns
ns
1
ns
ns
Hold time SPIDO
Delay time from the output pad
logic
Datasheet
5
tpad_out_dly
7 of 15
ns
Note /
Test Condition
50MHz, with
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